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CEU3301 - P-Channel MOSFET

Key Features

  • -30V, -28A, RDS(ON) = 32mΩ RDS(ON) = 50mΩ @VGS = -10V. @VGS = -4.5V. CED3301/CEU3301 Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. D D G S CEU SERIES TO-252(D-PAK) G D G S CED SERIES TO-251(I-PAK) S.

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Datasheet Details

Part number CEU3301
Manufacturer CET
File Size 423.84 KB
Description P-Channel MOSFET
Datasheet download datasheet CEU3301 Datasheet

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Full PDF Text Transcription (Reference)

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P-Channel Enhancement Mode Field Effect Transistor FEATURES -30V, -28A, RDS(ON) = 32mΩ RDS(ON) = 50mΩ @VGS = -10V. @VGS = -4.5V. CED3301/CEU3301 Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. D D G S CEU SERIES TO-252(D-PAK) G D G S CED SERIES TO-251(I-PAK) S ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Tc = 25 C unless otherwise noted Symbol Limit VDS VGS ID IDM PD TJ,Tstg -30 Units V V A A W W/ C C ±20 -28 -100 42 0.