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CEU4259 - N-Channel MOSFET

Key Features

  • 40V , 14A , RDS(ON) = 32mΩ @VGS = 10V. RDS(ON) = 46mΩ @VGS = 4.5V. -40V , -12A , RDS(ON) = 43mΩ @VGS = 10V. RDS(ON) = 65mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). G1 High power and current handing capability. Lead free product is acquired. TO-252-5L package. S1 G1 D1/D2 S2 G2 D1/D2 CEU SERIES TO-252-5L D1/D2 G2 S1 S2.

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Datasheet Details

Part number CEU4259
Manufacturer CET
File Size 190.58 KB
Description N-Channel MOSFET
Datasheet download datasheet CEU4259 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CEU4259 N-Channel Enhancement Mode Field Effect Transistor FEATURES 40V , 14A , RDS(ON) = 32mΩ @VGS = 10V. RDS(ON) = 46mΩ @VGS = 4.5V. -40V , -12A , RDS(ON) = 43mΩ @VGS = 10V. RDS(ON) = 65mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). G1 High power and current handing capability. Lead free product is acquired. TO-252-5L package. S1 G1 D1/D2 S2 G2 D1/D2 CEU SERIES TO-252-5L D1/D2 G2 S1 S2 ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol N-Channel P-Channel Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous e Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C VDS 40 40 VGS ±20 ±20 ID e 14 -12 IDM 56 -48 10.4 PD 0.