Datasheet4U Logo Datasheet4U.com

CEU6056 - N-Channel MOSFET

Key Features

  • 60V, 76A , RDS(ON) = 6.2mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. TO-251 & TO-252 package. D D G S CEU SERIES TO-252(D-PAK) G DS CED SERIES TO-251(I-PAK) G S.

📥 Download Datasheet

Datasheet Details

Part number CEU6056
Manufacturer CET
File Size 508.57 KB
Description N-Channel MOSFET
Datasheet download datasheet CEU6056 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
CED6056/CEU6056 N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 76A , RDS(ON) = 6.2mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. TO-251 & TO-252 package. D D G S CEU SERIES TO-252(D-PAK) G DS CED SERIES TO-251(I-PAK) G S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage VDS 60 VGS ±20 Drain Current-Continuous Drain Current-Pulsed a ID 76 IDM 304 Maximum Power Dissipation @ TC = 25 C - Derate above 25 C PD 70 0.