CET CEU63A3
N-Channel MOSFET
FEATURES
30V, 55A, RDS(ON) = 11mΩ @VGS = 10V. RDS(ON) = 14mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. CED63A3/CEU63A3 D D G S CEU SERIES TO-252(D-PAK) G D G S CED SERIES TO-251(I-PAK) SABSOLUTE MAXIMUM RATINGS
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Tc = 25 C unless otherwise noted Symbol Limit VDS VGS ID IDM PD TJ,Tstg 30 Units V V A A W W/ C C ±20 55 150 57 0.45 -55 to 150 Maximum Power Dissipation @ TC = 25 C - Derate above 25 C Operating and Store Temperature Range Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA Limit 2.2 50 Units C/W C/W Details are subject to change without notice . 1 Rev 2. 2006.Nov CED63A3/CEU63A3ELECTRICAL CHARACTERISTICS
Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Volta...