CEU73A3
CEU73A3 is N-Channel MOSFET manufactured by CET.
FEATURES
30V, 65A, RDS(ON) = 7.8mΩ(typ) @VGS = 10V. RDS(ON) = 10mΩ(typ) @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. D
D G S CEU SERIES TO-252(D-PAK)
S CED SERIES TO-251(I-PAK)
ABSOLUTE MAXIMUM RATINGS
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a
Tc = 25 C unless otherwise noted Symbol Limit VDS VGS ID IDM PD EAS IAS TJ,Tstg 30
Units V V A A W W/ C m J A C
±20
65 350 60 0.48 160 25 -55 to 150
Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C Single Pulsed Avalanche Energy d Single Pulsed Avalanche Current d Operating and Store Temperature Range
Thermal Characteristics
Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA Limit 2.1 50 Units C/W C/W
2005.March 6
- 122 http://.cetsemi.
CED73A3/CEU73A3
Electrical Characteristics
Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics b Gate Threshold Voltage Static Drain-Source On-Resistance Forwand Transconductance Dynamic Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics c Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-On Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage b td(on) tr td(off) tf Qg Qgs Qgd IS VSD VGS = 0V, IS = 20A VDS = 15V, ID = 20A, VGS = 4.5V VDD = 15V, ID = 1A, VGS = 10V, RGEN = 6Ω 19 6.8 71 12.8 24 9.1 7.5 20 1.5 23 12 128 17.5 30 ns ns ns ns n C n C n C A V c
Tc = 25 C unless otherwise noted Symbol BVDSS IDSS IGSSF IGSSR VGS(th) RDS(on) g FS Ciss Coss Crss Test Condition VGS = 0V, ID = 250µA VDS = 25V, VGS = 0V VGS = 20V, VDS = 0V VGS = -20V, VDS = 0V VGS = VDS, ID =...
