CM2302 Datasheet | CHIMICRON SEMICONDUCTOR

Description The NCE2302 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. Application - Battery protection - Load switch - Power management Part No Product Summary VDS= 20V,ID= 2.9A RDS(ON)< 59mΩ@ VGS=2.5V RDS(ON)< 45mΩ@ VGS=4.5V SOT-23 Package Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage VDS VGS Continuous Current Drain Pulsed Drain Current Power Description Operating Junction and Storage Temperature Range Thermal Resistance Junction to Ambient (PCB mounted)b IDM PD Tj， TSTG RθJA Maximum 20 ±10 2.9 10 1 -55°C to 150° Units A W ℃ ℃/w TAIWAN CHIMICRON SEMICONDUCTOR CO., LTD Rev. 1. 3 Dec. 2012 .chimicron. info@chimicron. Page 1 of 5 N-Channel Enhancement Mode Power MOSFET Electrical Characteristics (TA=25℃unless otherwise noted) Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current On Characteristics (Note 3) Gate Threshold Voltage Drain-Source On-State...