Datasheet Details
| Part number | CM3400 |
|---|---|
| Manufacturer | CHIMICRON SEMICONDUCTOR |
| File Size | 778.21 KB |
| Description | N-Channel Enhancement Mode Power MOSFET |
| Datasheet | CM3400-CHIMICRONSEMICONDUCTOR.pdf |
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Overview: CM3400 N-Channel Enhancement Mode Power MOSFET 30VDS/ ±12VGS/5.
| Part number | CM3400 |
|---|---|
| Manufacturer | CHIMICRON SEMICONDUCTOR |
| File Size | 778.21 KB |
| Description | N-Channel Enhancement Mode Power MOSFET |
| Datasheet | CM3400-CHIMICRONSEMICONDUCTOR.pdf |
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The NCE3400 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.
This device is suitable for use as a Battery protection or in other Switching application.
Application ●PWM applications ●Load switch ●Power management Product Summary VDS=30V ID= 5.8A RDS(ON)< 59mΩ@ VGS=2.5V RDS(ON)< 45mΩ@ VGS=4.5V RDS(ON)< 41mΩ@ VGS=10V D S G SOT-23 Package Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Maximum Drain-Source Voltage Gate-Source Voltage VDS 30 VGS ±12 Continuous Current Drain ID 5.8 Pulsed Drain Current(Note 1) IDM 30 Power Description PD 1.4 Operating Junction and Storage Temperature Tj, TSTG Range -55°C to 150°.
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