1N60S - SILICON SCHOTTKY BARRIER DIODE

Download the 1N60S datasheet PDF. This datasheet also covers the 1N60P variant, as both devices belong to the same silicon schottky barrier diode family and are provided as variant models within a single manufacturer datasheet.

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1N60S silicon schottky barrier diode by CHINA BASE - Datasheet Preview — Note: The manufacturer provides a single datasheet file (1N60P-CHINABASE.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	1N60S
Manufacturer	CHINA BASE
File Size	138.52 KB
Description	SILICON SCHOTTKY BARRIER DIODE
Datasheet	1N60S Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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1N60P, 1N60S SILICON SCHOTTKY BARRIER DIODE Characteristics equivalent to 1N60P and 1N60S Absolute Maximum Ratings (Ta = 25 OC) Parameter Peak Reverse Voltage Reverse Voltage Average Rectified Output Current Peak Forward Current Surge Forward Current Junction Temperature Storage Temperature Range 1.9 max 3.9 max R5 max 4.5± 1.0 10.0± 1.0 1.0 max Glass case DO-35-1 Dimensions in mm Max. 0.5 Max. 1.9 Min. 27.5 Black Cathode Band Black Part No. Black "ST" Brand XXX ST Max. 3.9 Min. 27.