1N60S Datasheet | CHINA BASE

1N60P, 1N60S SILICON SCHOTTKY BARRIER DIODE Characteristics equivalent to 1N60P and 1N60S Absolute Maximum Ratings (Ta = 25 OC) Parameter Peak Reverse Voltage Reverse Voltage Average Rectified Output Current Peak Forward Current Surge Forward Current Junction Temperature Storage Temperature Range 1.9 max 3.9 max R5 max 4.5± 1.0 10.0± 1.0 1.0 max Glass case DO-35-1 Dimensions in mm Max. 0.5 Max. 1.9 Min. 27.5 Black Cathode Band Black Part No. Black "ST" Brand Max. 3.9 Min. 27.5 Glass Case DO-35 Dimensions in mm Symbol VRM VR IO IFM Isurge Tj TS Value 45 20 50 150 500 175 - 55 to + 175 Unit V V m A m A m A OC OC Characteristics at Ta = 25 OC Parameter Forward Current at VF = 1 V Reverse Current at VR = 10 V 1N60P 1N60S Junction Capacitance at f = 1 MHz, V = -1 V Rectification efficiency at Vi = 2 Vrms, R = 5 KΩ, C = 20 p F, f = 40...