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2SA608 Datasheet PDF

CHINA BASE 2SA608

PNP Transistor

Part No. 2SA608
Datasheet 2SA608 Download
Manufacturer CHINA BASE
Description PNP Transistor
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2SA608 datasheet page 1 preview

APPLICATIONS

. The transistor is subdivided into two groups F and G according to its DC current gain.

APPLICATIONS

: ․Capable of being used in the low frequency to high frequency range.

FEATURES

: ․Large current capacity and wide ASO. 1.Emitter 2.Base 3.Collector TO-92 Plastic Package Weight approx. 0.19g

ABSOLUTE MAXIMUM RATINGS

(Ta = 25℃) Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Range Symbol -VCBO -VCEO -VEBO -IC -ICP Ptot Tj TS Value 50 50 6 150 400 500 150 -55 to +150 Unit V V V mA mA mW OC OC Page 1 of 2 7/15/2011 Characteristics at Tamb=25 OC Parameter DC Current Gain at -VCE=6V, -IC=1mA Current Gain Group F G at -VCE=6V, -IC=0.1mA Symbol hFE hFE hFE Collector Base Breakdown Voltage at -IC=10μA Collector Emitter Breakdown Voltage a
2SA608 page 2 preview