CHINA BASE 2SA608
PNP Transistor
APPLICATIONS
. The transistor is subdivided into two groups F and G according to its DC current gain.APPLICATIONS
: ․Capable of being used in the low frequency to high frequency range.FEATURES
: ․Large current capacity and wide ASO. 1.Emitter 2.Base 3.Collector TO-92 Plastic Package Weight approx. 0.19gABSOLUTE MAXIMUM RATINGS
(Ta = 25℃) Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Range Symbol -VCBO -VCEO -VEBO -IC -ICP Ptot Tj TS Value 50 50 6 150 400 500 150 -55 to +150 Unit V V V mA mA mW OC OC Page 1 of 2 7/15/2011 Characteristics at Tamb=25 OC Parameter DC Current Gain at -VCE=6V, -IC=1mA Current Gain Group F G at -VCE=6V, -IC=0.1mA Symbol hFE hFE hFE Collector Base Breakdown Voltage at -IC=10μA Collector Emitter Breakdown Voltage a