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2SA608 - PNP Transistor

Key Features

  • ․Large current capacity and wide ASO. 1.Emitter 2.Base 3.Collector TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings (Ta = 25℃) Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Range Symbol -VCBO -VCEO -VEBO -IC -ICP Ptot Tj TS Value 50 50 6 150 400 500 150 -55 to +150 Unit V V V mA mA mW OC OC Page 1 of 2 7/15/2011 Characteristics a.

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Datasheet Details

Part number 2SA608
Manufacturer CHINA BASE
File Size 119.83 KB
Description PNP Transistor
Datasheet download datasheet 2SA608 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2SA608 PNP Silicon Epitaxial Planar Transistor Low - Frequency General - Purpose Amplifier Applications. The transistor is subdivided into two groups F and G according to its DC current gain. Applications: ․Capable of being used in the low frequency to high frequency range. Features: ․Large current capacity and wide ASO. 1.Emitter 2.Base 3.Collector TO-92 Plastic Package Weight approx. 0.