CHINA BASE 2SA683
PNP Silicon Epitaxial Planar Transistor
| Part No. | 2SA683 |
|---|---|
| Datasheet | 2SA683 Download |
| Manufacturer | CHINA BASE |
| Description | PNP Silicon Epitaxial Planar Transistor |
| Buy | Stock & Price |
ABSOLUTE MAXIMUM RATINGS
(Ta = 25 OC) Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage 2SA683 2SA684 2SA683 2SA684 Collector Current Peak Collector Current Power Dissipation Junction Temperature Storage Temperature Range 1. Emitter 2. Collector 3. Base TO-92 Plastic Package Weight approx. 0.19g Symbol -VCBO -VCEO -VEBO -IC -IP Ptot Tj TS Value 30 50 25 40 5 1 1.5 1 150 - 55 to + 150 Unit V V V A A W OC OC Characteristics at Tamb = 25 OC Parameter Symbol Min. Typ. Max. Unit DC Current Gain at -VCE = 10 V, -IC = 500 mA Current Gain Group Q hFE 85 - 170 - R hFE 120 - 240 - S hFE 170 - 340 - at -VCE = 5 V, -IC = 1 A hFE 50 - -- Co