CHINA BASE 2SC1740
NPN Silicon Transistor
ABSOLUTE MAXIMUM RATINGS
(Ta = 25℃) Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Range 1. Emitter 2. Collector 3. Base TO-92 Plastic Package Weight approx. 0.19g Symbol VCBO VCEO VEBO IC Ptot Tj TS Value 60 50 5 150 300 150 -55 to +150 Unit V V V mA mW OC OC Page 1 of 2 7/15/2011 Characteristics at Tamb=25 OC Parameter DC Current Gain at VCE=6V, IC=1mA Collector Base Breakdown Voltage at IC=50μA Collector Emitter Breakdown Voltage at IC=1mA Emitter Base Breakdown Voltage at IE=50μA Collector Cutoff Current at VCB=60V Emitter Cutoff Current at VEB=5V Collector Saturation Voltage at IC=50mA,