CHINA BASE 2SC5345
NPN Silicon Epitaxial Planar Transistor
ABSOLUTE MAXIMUM RATINGS
( Ta = 25℃ ) Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature Range Symbol VCBO VCEO VEBO IC Ptot Tj TS Value 30 20 4 20 500 150 -55 to +150 Unit V V V mA mW OC OC Page 1 of 2 7/15/2011 Characteristics at Tamb=25 OC Parameter DC Current Gain at VCE=6V, IC=1mA Collector Base Breakdown Voltage at IC=10μA Collector Emitter Breakdown Voltage at IC=5mA Emitter Base Breakdown Voltage at IE=10μA Collector Cutoff Current at VCB=30V Emitter Cutoff Current at VEB=4V Collector Emitter Saturation Voltage at IC=10mA, IB=1mA