CHINA BASE BCW30
PNP Silicon Epitaxial Planar Transistor
| Part No. | BCW30 |
|---|---|
| Datasheet | BCW30 Download |
| Manufacturer | CHINA BASE |
| Description | PNP Silicon Epitaxial Planar Transistor |
| Buy | Stock & Price |
ABSOLUTE MAXIMUM RATINGS
(Ta = 25 OC) Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Peak Collector Current Power Dissipation Junction Temperature Storage Temperature Range Characteristics at Ta = 25 OC Parameter DC Current Gain at -VCE = 5 V, -IC = 2 mA Collector Cutoff Current at -VCB = 30 V Emitter Cutoff Current at -VEB = 5 V Collector Base Breakdown Voltage at -IC = 10 µA Collector Emitter Breakdown Voltage at -IC = 1 mA Emitter Base Breakdown Voltage at -IE = 10 µA Collector Emitter Saturation Voltage at -IC = 10 mA, -IB = 0.5 mA Base Emitter Voltage at -VCE = 5 V, -IC = 2 mA Transition Frequency at -VCE = 5 V, IE = 10 mA, f = 100 MHz Collector Base Capacitance at -VCB = 10 V, f = 1 MHz Page 1 of 2 1.Base 2.Emitter 3.Collecto SOT-23 Plastic Package Symbol -VCBO -VCEO -VEBO -IC -ICM Ptot Tj TS Value 32 32 5 100 200 200 150 - 55 to + 150