8N65F
FEATURE
- 8A,650V,RDS(ON)=1.0Ω@VGS=10V/4A
- Low gate charge
- Low Ciss
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
TO-220AB 8N65
ITO-220AB 8N65F
TO-263 8N65B
TO-262 8N65H
Absolute Maximum Ratings(TC=25℃,unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current(Note1) Single Pulse Avalanche Energy (Note 2) Avalanche Current(Note1) Repetitive Avalanche Energy (Note1) Reverse Diode d V/dt (Note 3) Operating Junction and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8"from case for 5 seconds
VDSS VGSS
ID IDM EAS IAR EAR dv/dt TJ,TSTG
Mounting Torque
6-32 or M3 screw
8N65 650 ±30 8 32 550 8 21 5.5 -55 to +150
10 1.1
UNIT
A m J A m J V/ns ℃
℃ lbf- in N- m
Thermal Characteristics
Parameter
Maximum Junction-to-Case Maximum Power Dissipation
TC=25℃
Symbol
Rth JC...
