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CHT-PLUTO-C1230 - High Temperature 1200V/30A Asynchronous Buck or Boost Module

Datasheet Summary

Description

CHT-PLUTO-C1230 is a high temperature 1200V/30A Silicon Carbide module including one MOSFET switch and one Schottky diode in a single hermetic package.

It is suitable to implement an asynchronous buck converter or a boost converter..

Features

  • (MOSFET).
  • Specified from -55 to +210°C (Tj).
  • VDS Max: 1200V.
  • Max Continuous Current: o 30A @ Tc≤160°C o 25A @ Tc=175°C.
  • Max Pulsed Current: 40A.
  • Typical MOSFET On-resistance: o RDSon= 20 mΩ @ Tj=25°C o RDSon= 60 mΩ @ Tj=210°C.
  • High Speed Switching.
  • Voltage control: VGS=-5V/20V.
  • Low gate charge: : QGS: 44nC Features (DIODE).
  • Typ. Forward Voltage @30A : 1.35V.
  • Max Continuous Current: 30A.
  • Max Peak Rep Fwd Surge Current: 50A.
  • Hermetic pac.

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Datasheet Details

Part number CHT-PLUTO-C1230
Manufacturer CISSOID
File Size 647.48 KB
Description High Temperature 1200V/30A Asynchronous Buck or Boost Module
Datasheet download datasheet CHT-PLUTO-C1230 Datasheet
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The Leader in High Temperature Semiconductor Solutions CHT-PLUTO-C1230 Version: 1.1 Preliminary Datasheet High Temperature 1200V/30A Asynchronous Buck or Boost Module General description CHT-PLUTO-C1230 is a high temperature 1200V/30A Silicon Carbide module including one MOSFET switch and one Schottky diode in a single hermetic package. It is suitable to implement an asynchronous buck converter or a boost converter.. This product is guaranteed for normal operation on the full range -55°C to +210°C (Tj). Each MOSFET or diode has a breakdown voltage in excess of 1200V and is capable of switching current up to 30A. The MOSFET have a on-resistance of 45mΩ at 25°C and 100mΩ at 210°C at VGS=20V. The MOSFET has an intrinsic body diode.
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