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CMT-HADES2S - High Temperature Gate Driver

General Description

CMT-HADES2S is a high-temperature, high reliability single chip fully integrated gate driver specifically designed to drive widebandgap high voltage / high power transistors, in particular Gallium Nitride (GaN) and Silicon Carbide (SiC) devices.

Key Features

  • the highest output current in the industry for products of this type. CMTHADES2S can be used with standard silicon MOSFETs and IGBTs in extended temperature.

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Datasheet Details

Part number CMT-HADES2S
Manufacturer CISSOID
File Size 588.63 KB
Description High Temperature Gate Driver
Datasheet download datasheet CMT-HADES2S Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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The Leader in High Temperature Semiconductor Solutions CMT-HADES2S Preliminary Datasheet Version: 1.5 4-Feb-19 (Last Modification Date) High Temperature Gate Driver - Secondary Side IC: Driver & Protection Functions General description CMT-HADES2S is a high-temperature, high reliability single chip fully integrated gate driver specifically designed to drive widebandgap high voltage / high power transistors, in particular Gallium Nitride (GaN) and Silicon Carbide (SiC) devices. It offers the most compact solution available on the market thanks to its small size and the low number of external components it requires, It also features the highest output current in the industry for products of this type.