CMT-HADES2S Overview
Description
CMT-HADES2S is a high-temperature, high reliability single chip fully integrated gate driver specifically designed to drive widebandgap high voltage / high power transistors, in particular Gallium Nitride (GaN) and Silicon Carbide (SiC) devices. It offers the most compact solution available on the market thanks to its small size and the low number of external components it requires, It also features the highest output current in the industry for products of this type.
Key Features
- Operating junction temperature: o from -55°C to +175°C
- Supply voltage: 5 to 30V
- Output peak current: o 12A @ 125°C o 9A @ 175°C
- RDSON: o 0.25Ω typ. @ 25°C o 0.45Ω typ. @ 175°C
- Max PWM frequency : 1MHz
