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Chip Integration Technology Corporation
MHU04N60
Silicon N-Channel Power MOSFET
Main Product Characteristics
ID VDSS PD(TC=25oC) RDS(ON)Typ
4A 600V 75W 2.0Ω
■ Features
• Fast switching. • ESD improved capability. • Low gate charge. (Typical Data:13nC) • Low reverse transfer capacitances.(Typical:2.2pF) • 100% single pulse avalanche energy test.
■ Application
• Power switch circuit of adaptor and charger.
■ Outline TO-251
12 3
1.Gate 2.Drain 3.Source
Drain
■ Mechanical data
• Epoxy:UL94-V0 rated flame retardant • Case : JEDEC TO-251 molded plastic body over
passivated chip • Lead : Axial leads, solderable per MIL-STD-202,
Method 208 guranteed.
MHU04N60 Datasheet
