MHU04N60
MHU04N60 is Silicon N-Channel Power MOSFET manufactured by Chip Integration Technology.
Features
- Fast switching.
- ESD improved capability.
- Low gate charge. (Typical Data:13n C)
- Low reverse transfer capacitances.(Typical:2.2p F)
- 100% single pulse avalanche energy test.
- Application
- Power switch circuit of adaptor and charger.
- Outline TO-251
12 3
1.Gate 2.Drain 3.Source
Drain
- Mechanical data
- Epoxy:UL94-V0 rated flame retardant
- Case : JEDEC TO-251 molded plastic body over passivated chip
- Lead : Axial leads, solderable per MIL-STD-202,
Method 208 guranteed.
Gate
Source Inner Equivalent principium Chart
- Absolute(TC = 25OC unless otherwise specified)
PARAMETER Drain to Source Voltage
CONDITIONS
Continuous Drain Current Continuous Drain Current Pulsed Drain Current(Note:1) Gate to Source Voltage Single Pulse Avalanche Energy(Note:2) Avalanche Current(Note:1)...
