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MSG061P03G - P-Channel Enhancement Mode MOSFET

General Description

DDDD SS SG PIN 1 DFN3.3x3.3-8(Saw-EP) ( 5,6,7,8 ) D D DD (4) G Absolute Maximum Ratings (TA = 25OC unless otherwise specified) PARAMETER CONDITIONS Drain-Source Voltage Continuous Drain Current(Note:2) Pulsed Drain Current(Note:2) Gate-Source Voltage TC = 25OC TC = 100OC TC = 25OC

Key Features

  • s.
  • -30V/-40A RDS(ON) = 6.1mΩ (max. ) @ VGS= -10V RDS(ON) = 11mΩ (max. ) @ VGS= -4.5V.
  • HBM ESD protection level pass 8KV.
  • 100% UIS+Rg tested.
  • Reliable and Rugged.
  • Lead free and green device available (RoHS compliant). Note: The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied.

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Datasheet Details

Part number MSG061P03G
Manufacturer CITC
File Size 707.45 KB
Description P-Channel Enhancement Mode MOSFET
Datasheet download datasheet MSG061P03G Datasheet

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MSG061P03G P-Channel Enhancement Mode MOSFET ■ Features • -30V/-40A RDS(ON) = 6.1mΩ (max.) @ VGS= -10V RDS(ON) = 11mΩ (max.) @ VGS= -4.5V • HBM ESD protection level pass 8KV. • 100% UIS+Rg tested. • Reliable and Rugged. • Lead free and green device available (RoHS compliant). Note: The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied. ■ Application • Power management in notebook computer portable equipment and battery powered system. ■ Pin Description DDDD SS SG PIN 1 DFN3.3x3.