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MSG061P03G

Manufacturer: Chip Integration Technology

MSG061P03G datasheet by Chip Integration Technology.

MSG061P03G datasheet preview

MSG061P03G Datasheet Details

Part number MSG061P03G
Datasheet MSG061P03G-CITC.pdf
File Size 707.45 KB
Manufacturer Chip Integration Technology
Description P-Channel Enhancement Mode MOSFET
MSG061P03G page 2 MSG061P03G page 3

MSG061P03G Overview

DDDD SS SG PIN 1 DFN3.3x3.3-8(Saw-EP) ( 5,6,7,8 ) D D DD (4) G Ratings (TA = 25OC unless otherwise specified) PARAMETER CONDITIONS Drain-Source Voltage Continuous Drain Current(Note:2) Pulsed Drain Current(Note:2) Gate-Source Voltage TC = 25OC TC = 100OC TC.

MSG061P03G Key Features

  • 30V/-40A RDS(ON) = 6.1mΩ (max.) @ VGS= -10V RDS(ON) = 11mΩ (max.) @ VGS= -4.5V
  • HBM ESD protection level pass 8KV
  • 100% UIS+Rg tested
  • Reliable and Rugged
  • Lead free and green device available
  • Application
  • Power management in notebook puter portable equipment and battery powered system
  • Pin Description

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