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MSU115N06G Datasheet N-channel Enhancement Mode MOSFET

Manufacturer: Chip Integration Technology

Overview: ■.

General Description

Top View of TO-251 D G ■ Absolute Maximum Ratings (TA = 25OC unless otherwise specified) PARAMETER CONDITIONS Drain-Source Voltage Continuous Drain Current Pulsed Drain Current(Note:1) Gate-Source Voltage TC = 25OC TC = 100OC TC = 25OC Diode Continuous Forward Current Avalanche Current, single pulse (Note:2) TC = 25OC L=0.5mH Avalanche Energy, single pulse (Note:2) L=0.5mH Maximum Power Dissipation Thermal Resistance-Junction to Ambient(Note:3) TC = 25OC TC = 100OC Steady State Operating and Storage Temperature Range Maximum Power Dissipation Continuous Drain Current Thermal Resistance-Junction to Case(Note:3) TA = 25OC TA

Key Features

  • s.
  • 60V/58A RDS(ON) = 11.5mΩ (max. ) @ VGS= 10V RDS(ON) = 14.5mΩ (max. ) @ VGS= 4.5V.
  • Reliable and Rugged.
  • Lead free and green device available (RoHS compliant).
  • 100% UIS + Rg Tested.

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