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MSU115N06G

Manufacturer: Chip Integration Technology

MSU115N06G datasheet by Chip Integration Technology.

MSU115N06G datasheet preview

MSU115N06G Datasheet Details

Part number MSU115N06G
Datasheet MSU115N06G-CITC.pdf
File Size 677.12 KB
Manufacturer Chip Integration Technology
Description N-Channel Enhancement Mode MOSFET
MSU115N06G page 2 MSU115N06G page 3

MSU115N06G Overview

Top View of TO-251 D G Ratings (TA = 25OC unless otherwise specified) PARAMETER CONDITIONS Drain-Source Voltage Continuous Drain Current Pulsed Drain Current(Note:1) Gate-Source Voltage TC = 25OC TC = 100OC TC = 25OC Diode Continuous Forward Current Avalanche.

MSU115N06G Key Features

  • 60V/58A RDS(ON) = 11.5mΩ (max.) @ VGS= 10V RDS(ON) = 14.5mΩ (max.) @ VGS= 4.5V
  • Reliable and Rugged
  • Lead free and green device available
  • 100% UIS + Rg Tested
  • Application
  • DC-DC converter
  • Power Load Switching Application
  • Pin Description
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