MwT-7F Datasheet | CML

Features : - 21 d Bm Output Power at 12 GHz - 15 d B Small Signal Gain at 12 GHz - Excellent for High Linear Gain or Oscillator Applications - Ideal for mercial, Military, Hi-Rel Space Applications - 0.25 Micron Refractory Metal/Gold Gate - 250 Micron Gate Width - Choice of Chip and Three Package Types Chip Dimensions: 365 x 250 microns Chip Thickness: 100 microns Description : The Mw T-7F is a Ga As MESFET device whose nominal 0.25 micron gate length and 250 micron gate width make it ideally suited to applications requiring high-gain and medium linear power in the 500 MHz to 26 GHz frequency range. Mw T-7F is equally effective for either wideband (e.g., 6 to 18 GHz) or narrow-band applications. Processing which guarantees low phase noise makes the Mw T-7F particularly attractive for oscillator applications. All chips are passivated with Si N (Silicon Nitride). RF Specifications: - at Ta= 2°5 C DC Specifications: - at Ta= 25 ° C .cmlmicro. November 2023 Mw T-7F 26 GHz Medium Power Ga As FET .cmlmicro. November 2023 Mw T-7F 26 GHz Medium Power Ga As FET MAXIMUM RATINGS AT Ta = 25 °C Notes: 1. Exceeding any one of these limits in continuous operation may reduce the mean-time- to-failure below the design goal. 2. Exceeding any one of these limits may cause permanent damage. .cmlmicro. November 2023 Mw T-7F 26 GHz Medium Power Ga As FET S-PARAMETER Vds=6V, Ids= 0.7 x...