CML MwT-7F
The MwT-7F is a GaAs MESFET device whose nominal 0.25 micron gate length and 250 micron gate width make it ideally suited to applications requiring high-gain and medium linear power in the 500 MHz to 26 GHz frequency range. MwT-7F is equally effective for either wideband (e.g., 6 to 18 GHz) or narrow-band applications. Processing which guarantees low phase noise makes the MwT-7F particularly attractive for oscillator applications.| Part No. | MwT-7F |
|---|---|
| Datasheet | MwT-7F Download |
| Manufacturer |  CML |
| Description | Medium Power GaAs FET |
| Buy | Stock & Price |
FEATURES
:● 21 dBm Output Power at 12 GHz
● 15 dB Small Signal Gain at 12 GHz
● Excellent for High Linear Gain or Oscillator
APPLICATIONS
● Ideal for Commercial, Military, Hi-Rel SpaceAPPLICATIONS
● 0.25 Micron Refractory Metal/Gold Gate● 250 Micron Gate Width
● Choice of Chip and Three Package Types Chip Dimensions: 365 x 250 microns Chip Thickness: 100 microns
DESCRIPTION
: All chips are passivated with SiN (Silicon Nitride). RF Specifications:● at Ta= 2°5 C DC Specifications:
● at Ta= 25 ° C 1 November 2023 MwT-7F 26 GHz Medium Power GaAs FET 2 November 2023 MwT-7F 26 GHz Medium Power GaAs FET
MAXIMUM RATINGS
AT Ta = 25 °C Notes: 1. Exceeding any one of these limits in continuous operation may reduce the mean-time- to-failure below the design goal. 2. Exceeding any one of these limits may cause permanent damage. 3 November 2023 MwT-7F 26 GHz Medium Power GaAs FET S-PARAMETER Vds=6V, Ids= 0.7 x Idss Freq. S11 S21 GHz dB Ang (°) dB Ang (°) 1 -0.498 -10.990 10.175 170.686 2 -0.582 -21.883 10.025 161.933 3 -0.595 -32.489 9.882 153.342 4 -0.854 -41.958 9.630 145.248 5 -1.012 -52.008 9.248 137.024 6 -1.317 -60.380 8.819 129.651 7 -1.
