CML MwT-PH33F
The MwT-PH33F is a AlGaAs/InGaAs pHEMT (Pseudomorphic-High-Electron-Mobility-Transistor) device whose nominal 0.25 micron gate length and 300 micron gate width make it ideally suited for applications requiring high-gain and medium power up to 26 GHz frequency range. The device is equally effective for either wideband (e.g. The chip is produced using reliable metal systems and passivated to insure excellent reliability.| Part No. | MwT-PH33F |
|---|---|
| Datasheet | MwT-PH33F Download |
| Manufacturer |  CML |
| Description | Medium Power AlGaAs/InGaAs pHEMT |
| Buy | Stock & Price |
FEATURES
:● 24 dBm of Power at 18 GHz
● 14 dB Small Signal Gain at 18 GHz
● 45% typical PAE at 18 GHz
● 0.25 x 300 Micron Refractory Metal/Gold Gate
● Excellent for Medium Power, Gain, and High Power Added Efficiency
● Ideal for Commercial, Military, Hi-Rel Space
APPLICATIONS
Chip Dimensions: 415 x 315 microns Chip Thickness: 100 micronsDESCRIPTION
: 6 to 18 GHz) or narrow-band applications.ELECTRICAL SPECIFICATIONS
: at Ta= 25 °C DC Specifications: at Ta= 25 °C 1 February 2022 MwT-PH33F 26 GHz Medium Power AlGaAs/InGaAs pHEMT 2 February 2022 MwT-PH33F 26 GHz Medium Power AlGaAs/InGaAs pHEMT Absolute Maximum Rating Notes: 1. Exceeding any one of these limits in continuous operation may reduce the mean-time- to-failure below the design goal. 2. Exceeding any one of these limits may cause permanent damage. 3 February 2022 S-Parameters MwT-PH33F 26 GHz Medium Power AlGaAs/InGaAs pHEMT Available Packaging: 70 Package - MwT-PH33F70 71 Package - MwT-PH33F71 73 Package - MwT-PH33F73 4 February 2022 MwT-PH33F 26 GHz Medium Power AlGaAs/InGaAs pHEMT Contact Information For additional information please visit or contact a sales office.
