MJ90 Datasheet PDF

COM SET MJ90

The MJ900, MJ901, MJ1000 and MJ1001 are silicon epitaxial-bas transistors in monolithic Darlington configuration, and are mounted in JEDEC TO-3 metal case. They are intended for use in power linear and switching applications.

Part No.	MJ90
Datasheet	MJ90 Download
Manufacturer	COM SET
Description	Complementary Power Darlingtons
Buy	Stock & Price

ABSOLUTE MAXIMUM RATINGS

Symbol Ratings MJ900 MJ1000 Value Unit 60 Vdc VCBO Collector-Base Voltage MJ901 MJ1001 MJ900 MJ1000 80 60 Vdc VCEO Collector-EmitterVoltage IB=0 MJ901 MJ1001 MJ900 MJ1000 MJ901 MJ1001 MJ900 MJ1000 MJ901 MJ1001 80 VEBO Emitter-Base Voltage 5.0 Vdc IC Collector Current IC(RMS) 8.0 Adc Page 1 of 4 COMSET SEMICONDUCTORS MJ900/901/1000/1001 MJ900 MJ1000 MJ901 MJ1001 @ TC < 25° MJ900 MJ1000 MJ901 Derate above MJ1001 25°C IB Base Current 0.1 Adc 90 Watts PT Power Dissipation 0.515 W/°C TJ Junction Temperature MJ900 MJ1000 MJ901 MJ1001 -65 to +200 °C TS Storage Temperature THERMAL CHARACTERISTICS Symbol RthJ-C Ratings Thermal Resistance, Junction to Case MJ900 MJ1000 MJ901 MJ1001 Value 1.94 Unit °C/W Page 2 of 4 w w w . D a t a S h e e t 4 U . c o m COMSET SEMICONDUCTORS MJ900/901/1000/1001

ELECTRICAL CHARACTERISTICS

TC=25°C unless otherwise noted Symbol VCEO Ratings Collector-Emitter Breakdown Voltage (*) Test Condition(s) MJ900 MJ1000 MJ901 MJ1001 MJ900 MJ1000 MJ901...