BFW10 Datasheet PDF

DESCRIPTION

: Symmetrical N-CHANNEL silicon planar epitaxial junction field-effect transistors in TO72 metal envelopes with the shield lead connected to the case. They are designed for broad band amplifiers (0 to 300 MHz). Their very low frequencies makes these devices very suitable for differencial amplifiers, electro-medical and nuclear detector preamplifiers.

ABSOLUTE MAXIMUM RATINGS

Symbol Ratings VDS -VGSO VDGO IDS IG Ptot Tstg Tj Drain-Source Voltage Gate-Source Voltage (Open Drain) Drain-Gate Voltage (Open Source) Drain Current Gate Current Total Power Dissipation at Tamb = 25°C Storage Temperature Range Junction Temperature THERMAL CHARACTERISTICS Symbol Ratings RthJA Thermal Resistance, junction-ambient Value 30 30 30 20 10 250 -65 to 175 175 Unit V V V mA mA mW °C °C Value 590 Unit K/W 19/08/2014 COMSET SEMICONDUCTORS 1/3 BFW10 – BFW11

ELECTRICAL CHARACTERISTICS

Tj = 25°C unless otherwise specified Symbol Ratings -IGSS Gate Cutoff Current IDSS Drain Current -VGS Gate Source V...