BFW11 - N-CHANNEL SILICON FETS

This page provides the datasheet information for the BFW11, a member of the BFW10 N-CHANNEL SILICON FETS family.

Description

Symmetrical N-CHANNEL silicon planar epitaxial junction field-effect transistors in TO72 metal envelopes with the shield lead connected to the case.

They are designed for broad band amplifiers (0 to 300 MHz).

COMSET

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Datasheet Details

Part number	BFW11
Manufacturer	COMSET
File Size	58.38 KB
Description	N-CHANNEL SILICON FETS
Datasheet	BFW11 Datasheet
Additional preview pages of the BFW11 datasheet.

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Full PDF Text Transcription

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BFW10 – BFW11 N CHANNEL SILICON FETS DESCRIPTION : Symmetrical N-CHANNEL silicon planar epitaxial junction field-effect transistors in TO72 metal envelopes with the shield lead connected to the case. They are designed for broad band amplifiers (0 to 300 MHz). Their very low frequencies makes these devices very suitable for differencial amplifiers, electro-medical and nuclear detector preamplifiers.

Published: Aug 28, 2019 |