BUZ22 Datasheet PDF

ABSOLUTE MAXIMUM RATINGS

Symbol Ratings VDS ID IDpuls IAR EAR EAS VGS RDS(on) PT tJ tstg Drain-Source Voltage Continuous Drain Current TC= 27°C Pulsed Drain Current TC= 25°C Avalanche Current, Limited by Tjmax Avalanche Energy, Periodic Limited by Tjmax Avalanche Energy, Single pulse ID = 34 A, VDD = 25 V, RGS = 25 Ω L = 285.5 µH, Tj = 25°C Gate-Source Voltage Drain-Source on Resistance Power Dissipation TC= 25°C Operating Temperature Storage Temperature range THERMAL CHARACTERISTICS Symbol RthJC RthJA Ratings Thermal Resistance, chip case Thermal Resistance, chip to ambient Value 100 34 136 34 15 220 20 0.055 125 -55 to +150 -55 to +150 Unit V A mJ V Ω W °C Value <1 <75 Unit K/W 26/01/2015 COMSET SEMICONDUCTORS 1/3 BUZ22

ELECTRICAL CHARACTERISTICS

TC=25°C unless otherwise noted Symbol Ratings Test Condition(s) VDSS