CR20N65F A9K, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.
Key Features
Fast Switching.
Low ON Resistance.
Low Gate Charge.
Low Reverse transfer capacitances.
100% Single Pulse avalanche energy Test
VDSS ID PD(TC=25℃) RDS(ON)Typ
650
V
20
A
45
W
0.43
Ω.
Full PDF Text Transcription for CR20N65FA9K (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
CR20N65FA9K. For precise diagrams, and layout, please refer to the original PDF.
Silicon N-Channel Power MOSFET CR20N65F A9K General Description： CR20N65F A9K, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology...
View more extracted text
Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-220F, which accords with the RoHS standard. Features： Fast Switching Low ON Resistance Low Gate Charge Low Reverse transfer capacitances 100% Single Pulse avalanche energy Test VDSS ID PD(TC=25℃) RDS(ON)Typ 650 V 20 A 45 W 0.43 Ω Applications： Power switch circuit of adaptor and charger.
CR20N65FA9K Datasheet
