CR4N50F A9K, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.
Key Features
Fast Switching.
Low ON Resistance.
Low Gate Charge.
Low Reverse transfer capacitances.
100% Single Pulse avalanche energy Test
VDSS ID PD(TC=25℃) RDS(ON)Typ
500
V
4
A
30
W
2.1
Ω.
Full PDF Text Transcription for CR4N50FA9K (Reference)
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Silicon N-Channel Power MOSFET CR4N50F A9K General Description： CR4N50F A9K, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology w...
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nhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-220F, which accords with the RoHS standard. Features： Fast Switching Low ON Resistance Low Gate Charge Low Reverse transfer capacitances 100% Single Pulse avalanche energy Test VDSS ID PD(TC=25℃) RDS(ON)Typ 500 V 4 A 30 W 2.1 Ω Applications： Power switch circuit of adaptor and charger.
CR4N50FA9K Datasheet
