CRG08T60A03L - Silicon FS Trench IGBT

CR Micro

General Description

(FS) technology, offering superior conduction and switching performances.

Key Features

TO-263.
FS Trench Technology, Positive temperature coefficient.
Low saturation voltage: VCE(sat), typ= 1.8V @ IC = 8A and TC = 25°C.
RoHS Compliant.

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CRG08T60A03L silicon fs trench igbt by CR Micro - Datasheet Preview

Datasheet Details

Part number	CRG08T60A03L
Manufacturer	CR Micro
File Size	1.55 MB
Description	Silicon FS Trench IGBT
Datasheet	CRG08T60A03L Datasheet

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Full PDF Text Transcription (Reference)

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Silicon FS Trench IGBT CRG08T60A03L General Description： VCES Using HUAJING's proprietary trench design and advanced Field Stop IC 600 V 8 A (FS) technology, offering superior conduction and switching performances. Ptot（TC=25℃） 104 W VCE(sat) 1.8 V Features： TO-263 ● FS Trench Technology, Positive temperature coefficient ● Low saturation voltage: VCE(sat), typ= 1.8V @ IC = 8A and TC = 25°C ● RoHS Compliant Applications： ● Motor control ● Home appliances ● General-purpose inverter ● Industrial sewing machine Package Parameters Type CRG08T60A03L Marking G08T60A03L Package TO-263 Packing Tape & Reel WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD.