CRG120T65AX7HDZ - Silicon FS Trench IGBT

CR Micro

General Description

Using micro trench design and advanced Field Stop (FS) technology, offering superior conduction and switching performances.

RoHS Compliant.

Key Features

FS Trench Technology, Positive temperature coefficient.
Low saturation voltage： VCE(sat),TYP=1.33V @IC=120A,VGE=15V；.
Low switching loss.

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CRG120T65AX7HDZ silicon fs trench igbt by CR Micro - Datasheet Preview

Datasheet Details

Part number	CRG120T65AX7HDZ
Manufacturer	CR Micro
File Size	1.26 MB
Description	Silicon FS Trench IGBT
Datasheet	CRG120T65AX7HDZ Datasheet

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Full PDF Text Transcription (Reference)

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Silicon FS Trench IGBT CRG120T65AX7HDZ General Description： Using micro trench design and advanced Field Stop (FS) technology, offering superior conduction and switching performances. RoHS Compliant. Features： ● FS Trench Technology, Positive temperature coefficient ● Low saturation voltage： VCE(sat),TYP=1.33V @IC=120A,VGE=15V； ● Low switching loss Applications ● UPS ● Solar converts ● Charger VCES 650 V IC 120 A Ptot （TC=25℃） 511 W VCE(sat) 1.33 V Package:TO-247Plus Equivalent circuit: Package Parameters Type CRG120T65AX7HDZ Package TO-247Plus Marking G120T65AX7HDZ Packing Tube WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD.