Datasheet Summary
Silicon FS Trench IGBT CRG120T65AX7HDZ
General Description：
Using micro trench design and advanced Field Stop (FS) technology, offering superior conduction and switching performances. RoHS pliant.
Features
：
- FS Trench Technology, Positive temperature coefficient
- Low saturation voltage： VCE(sat),TYP=1.33V @IC=120A,VGE=15V；
- Low switching loss
Applications
- UPS
- Solar converts
- Charger
VCES
650 V
120 A
Ptot （TC=25℃） 511
VCE(sat)
1.33 V
Package:TO-247Plus
Equivalent circuit:
Package Parameters
Type CRG120T65AX7HDZ
Package TO-247Plus
Marking G120T65AX7HDZ
Packing Tube
WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 1 of 10...