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CRG15T65R05SDZ-G - IGBT

General Description

Using micro trench design and advanced Field Stop (FS) technology, offering superior conduction and switching performances.

RoHS Compliant.

Key Features

  • FS Trench Technology, Positive temperature coefficient.
  • Low saturation voltage： VCE(sat),TYP=1.55V @IC=15A,VGE=15V；.
  • Low switching loss：.
  • Halogen free VCES 650 V IC 15 A Ptot （TC=25℃） 92 W VCE(sat) 1.55 V TO-263.

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Silicon FS Trench IGBT CRG15T65R05SDZ-G General Description： Using micro trench design and advanced Field Stop (FS) technology, offering superior conduction and switching performances. RoHS Compliant. Features： ● FS Trench Technology, Positive temperature coefficient ● Low saturation voltage： VCE(sat),TYP=1.55V @IC=15A,VGE=15V； ● Low switching loss： ● Halogen free VCES 650 V IC 15 A Ptot （TC=25℃） 92 W VCE(sat) 1.55 V TO-263 Applications ● UPS ● Solar converts ● Charger ● Motor control Package Parameters Type CRG15T65R05SDZ Package TO-263 Marking G15T65R05SDZ Packing Tape & Reel WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD.