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CRG20T65R85SDZ-G - Silicon FS Trench IGBT

General Description

Using micro trench design and advanced Field Stop (FS) technology, offering superior conduction and switching performances.

RoHS Compliant.

Key Features

  • FS Trench Technology, Positive temperature coefficient;.
  • Low saturation voltage: VCE(sat),TYP=1.5V @IC=20A,VGE=15V;.
  • Low switching loss;.
  • Halogen Free;.

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Datasheet Details

Part number CRG20T65R85SDZ-G
Manufacturer CR Micro
File Size 1.26 MB
Description Silicon FS Trench IGBT
Datasheet download datasheet CRG20T65R85SDZ-G Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Silicon FS Trench IGBT CRG20T65R85SDZ-G General Description: Using micro trench design and advanced Field Stop (FS) technology, offering superior conduction and switching performances. RoHS Compliant. Features: ● FS Trench Technology, Positive temperature coefficient; ● Low saturation voltage: VCE(sat),TYP=1.5V @IC=20A,VGE=15V; ● Low switching loss; ● Halogen Free; Applications ● UPS ● Solar converts ● Charger ● Motor control VCES 650 V IC 20 A Ptot (TC=25℃) 124 W VCE(sat) 1.5 V TO-220 Package Parameters Type CRG20T65R85SDZ-G Package TO-220 Marking G20T65R85SDZ Packing Tube WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD.