CRG20T65R95SDZ-G - Silicon FS Trench IGBT

CR Micro

General Description

Using micro trench design and advanced Field Stop (FS) technology, offering superior conduction and switching performances.

RoHS Compliant.

Key Features

FS Trench Technology, Positive temperature coefficient；.
Low saturation voltage： VCE(sat),TYP=1.5V @IC=20A,VGE=15V；.
Low switching loss；.
Halogen Free；.

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CRG20T65R95SDZ-G silicon fs trench igbt by CR Micro - Datasheet Preview

Datasheet Details

Part number	CRG20T65R95SDZ-G
Manufacturer	CR Micro
File Size	1.61 MB
Description	Silicon FS Trench IGBT
Datasheet	CRG20T65R95SDZ-G Datasheet

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Full PDF Text Transcription (Reference)

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Silicon FS Trench IGBT CRG20T65R95SDZ-G General Description： Using micro trench design and advanced Field Stop (FS) technology, offering superior conduction and switching performances. RoHS Compliant. Features： ● FS Trench Technology, Positive temperature coefficient； ● Low saturation voltage： VCE(sat),TYP=1.5V @IC=20A,VGE=15V； ● Low switching loss； ● Halogen Free； Applications ● UPS ● Solar converts ● Charger ● Motor control VCES 650 V IC 20 A Ptot （TC=25℃） 45.5 W VCE(sat) 1.5 V TO-220F Package Parameters Type CRG20T65R95SDZ-G Package TO-220F Marking G20T65R95SDZ Packing Tube WU XI CHINA RESOUR CES HUAJING MICROELECTRONICS CO., LTD.