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CRG30T65RK5SDZ - Silicon FS Trench IGBT

Datasheet Summary

Description

Using micro trench design and advanced Field Stop (FS) technology, offering superior conduction and switching performances.

RoHS Compliant.

Features

  • FS Trench Technology, Positive temperature coefficient.
  • Low saturation voltage： VCE(sat),TYP=1.5V @IC=30A,VGE=15V；.
  • Low switching loss：.

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Datasheet preview – CRG30T65RK5SDZ

Datasheet Details

Part number CRG30T65RK5SDZ
Manufacturer CR Micro
File Size 1.22 MB
Description Silicon FS Trench IGBT
Datasheet download datasheet CRG30T65RK5SDZ Datasheet
Additional preview pages of the CRG30T65RK5SDZ datasheet.

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Full PDF Text Transcription

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Silicon FS Trench IGBT CRG30T65RK5SDZ General Description： Using micro trench design and advanced Field Stop (FS) technology, offering superior conduction and switching performances. RoHS Compliant. Features： ● FS Trench Technology, Positive temperature coefficient ● Low saturation voltage： VCE(sat),TYP=1.5V @IC=30A,VGE=15V； ● Low switching loss： Applications ● UPS ● Solar converts ● Charger ● Motor Control VCES 650 V IC 30 A Ptot （TC=25℃） 188 W VCE(sat) 1.5 V TO-247 Package Parameters Type CRG30T65RK5SDZ Package TO-247 Marking G30T65RK5SDZ Packing Tube WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD.
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