CRG75T65AQF5SD - Silicon FS Trench IGBT

Datasheet Summary

Description

Using micro trench design and advanced Field Stop (FS) technology, offering superior conduction and switching performances.

RoHS Compliant.

Features

FS Trench Technology, Positive temperature coefficient.
Low saturation voltage： VCE(sat),TYP=1.45V @IC=75A,VGE=15V； VCES 650 V IC 75 A Ptot （TC=25℃） 468 W VCE(sat) 1.45 V TO-247-4.

CR Micro

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Datasheet Details

Part number	CRG75T65AQF5SD
Manufacturer	CR Micro
File Size	1.07 MB
Description	Silicon FS Trench IGBT
Datasheet	CRG75T65AQF5SD Datasheet
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Silicon FS Trench IGBT CRG75T65AQF5SD General Description： Using micro trench design and advanced Field Stop (FS) technology, offering superior conduction and switching performances. RoHS Compliant. Features： ● FS Trench Technology, Positive temperature coefficient ● Low saturation voltage： VCE(sat),TYP=1.45V @IC=75A,VGE=15V； VCES 650 V IC 75 A Ptot （TC=25℃） 468 W VCE(sat) 1.45 V TO-247-4 Applications ● UPS ● Solar converts ● Charger Package Parameters Type CRG75T65AQF5SD Package TO-247-4L Marking G75T65AQF5SD Packing Tube WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD.

Published: Jan 29, 2025 |