CRGMP50T120DV2C3
Features
：
- 采用沟槽栅/场终止 IGBT
- 低饱和压降
- 低开关损耗
- 10us 以上短路能力
应用 / Applications
- 电机传动
- 伺服驱动器
VCES = 1200V IC nom = 50A / ICRM = 100A Value2 封装
- Trench / Field Stop IGBT
- Low Vce(sat)
- Low Switching Losses
- Short circuit rated > 10us
- Motor Drives
- Servo Drives
无锡华润华晶微电子有限公司
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2024V01
IGBT-模块 IGBT-modules
IGBT, 逆变器 / IGBT, Inverter
最大额定值 / Maximum Rated Values
集电极－发射极电压 Collector-emitter voltage
Tj = 25°C
连续集电极直流电流 Continuous DC collector current
TC = 100°C, Tj max = 175°C
集电极重复峰值电流 Repetitive peak collector current t P = 1ms
总功率损耗 Total power dissipation
TC = 25°C, Tj max = 150°C
栅极－发射极峰值电压
Gate- emitter peak voltage
VCES
ICRM
VGES
+/-20...
