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Silicon N-Channel Power MOSFET CRJD190N65G3E-G
General Description：
CRJD190N65G3E-G, the silicon N-channel Enhanced MOSFETs, is obtained by the super junction technology which reduces the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package type is TO-252, which accords with the RoHS standard.
VDSS(Tjmax) ID PD(TC=25℃) RDS(ON)Typ Eoss@400V
700
V
18
A
212
W
0.16
Ω
2.4
uJ
Features：
Fast Switching
Low Gate Charge
Low Reverse transfer capacitances
100% Single Pulse avalanche energy Test
Halogen Free
Zener-Protected
Applications：
Power switch circuit of adaptor, charger and LED.
CRJD190N65G3E-G Datasheet
