CRM10QM80F Datasheet | CR Micro

Features - Uses CRM(CQ) advanced Split Gate technology Product Summary - Extremely low on-resistance RDS(on) - 3-Phase Full Bridge N-Channel MOSFET Module - Electrically Isolated DBC Substrate for Low Thermal Resistance VDS RDS(on) Typ. 100V 1.9mΩ 80A Applications - Motor drive MDIP18 Top View Package Marking and Ordering Information Bottom View Part # Marking Package Packing Reel Size Tape Width CRM10QM80F CRM10QM80F MDIP18 Tube N/A N/A Qty 12pcs ⑩ ⑨⑧ ⑦ ⑥⑤ ④ ③② ① Rev1.0 ©China Resources Microelectronics (Chongqing) Limited Page 1 华润微电子(重庆)有限公司 3-Phase Full Bridge N-Channel MOSFET Module Absolute Maximum Ratings Parameter Drain-source voltage Continuous drain current TC = 25°C (Package Limit) Pulsed drain current (TC = 25°C, tp limited by Tjmax) Avalanche energy, single pulse (L=0.5m H, VDS=80V) Gate-Source voltage Power dissipation (TC = 25°C) Operating junction and storage temperature Thermal Mechanical Characteristics Parameter Thermal resistance, junction - heatsink. Weight Symbol VDS ID ID pulse EAS VGS Ptot Tj , T stg Maximum 100 80 320 2000 ±20 73 -55...+150 Unit...