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CRMM6602C - 30V Complementary Power MOSFET

Features

  • Uses CRM(CQ) advanced Trench technology.
  • Extremely low on-resistance RDS(on).
  • Excellent QgxRDS(on) product(FOM).
  • Complementary N-ch and P-ch MOSFET.

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Datasheet Details

Part number CRMM6602C
Manufacturer CR Micro
File Size 1.12 MB
Description 30V Complementary Power MOSFET
Datasheet download datasheet CRMM6602C Datasheet
Additional preview pages of the CRMM6602C datasheet.

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() Features • Uses CRM(CQ) advanced Trench technology • Extremely low on-resistance RDS(on) • Excellent QgxRDS(on) product(FOM) • Complementary N-ch and P-ch MOSFET Applications • Motor drive CRMM6602C 30V Complementary Power MOSFET Product Summary Symbol N-Ch VDS RDS(on) typ. 30V 25mΩ ID 5A P-Ch -30V 60mΩ -3.5A 100% DVDS Tested 100% Avalanche Tested Package Marking and Ordering Information Part # Marking Package CRMM6602C CRMM6602C SOT-23-6 Absolute Maximum Ratings Parameter Drain-source voltage Continuous drain current TC = 25°C (Silicon limit) Continuous drain current TC = 25°C (Package limit) Pulsed drain current (TC = 25°C, tp limited by Tjmax) Avalanche energy, single pulse (L=0.
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