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CRMV1004C - 100V Complementary Power MOSFET

Features

  • Uses CRM(CQ) advanced Trench technology.
  • Extremely low on-resistance RDS(on).
  • Excellent QgxRDS(on) product(FOM).
  • Complementary N-ch and P-ch MOSFET.

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Datasheet preview – CRMV1004C

Datasheet Details

Part number CRMV1004C
Manufacturer CR Micro
File Size 1.17 MB
Description 100V Complementary Power MOSFET
Datasheet download datasheet CRMV1004C Datasheet
Additional preview pages of the CRMV1004C datasheet.

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Full PDF Text Transcription

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() Features • Uses CRM(CQ) advanced Trench technology • Extremely low on-resistance RDS(on) • Excellent QgxRDS(on) product(FOM) • Complementary N-ch and P-ch MOSFET Applications • Motor drive CRMV1004C 100V Complementary Power MOSFET Product Summary Symbol N-Ch VDS 100V RDS(on) typ. 71mΩ ID 10A P-Ch -100V 67mΩ -10A 100% DVDS Tested 100% Avalanche Tested Package Marking and Ordering Information Part # Marking Package Packing Reel Size Tape Width CRMV1004C CRMV1004C TO-252-5 Taping N/A N/A Absolute Maximum Ratings Parameter Drain-source voltage Continuous drain current TC = 25°C (Silicon limit) Continuous drain current TC = 25°C (Package limit) Pulsed drain current (TC = 25°C, tp limited by Tjmax) Avalanche energy, single pulse (L=0.
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