CRSM052N10N3
CRSM052N10N3 is SkyMOS3 N-MOSFET manufactured by CR Micro.
Features
- Uses CRM(CQ) advanced Sky MOS3 technology
- Extremely low on-resistance RDS(on)
- Excellent Qgx RDS(on) product(FOM)
- Qualified according to JEDEC criteria
Applications
- Synchronous Rectification for Converters
- Charger for Mobile Devices
- Battery management System
Product Summary
VDS RDS(on).typ ID
100V 4.4mΩ 60A
100% DVDS Tested 100% Avalanche Tested
Package Marking and Ordering Information
Part #
Marking
CRSM052N10N3 SM052N10N3
Package DFN56
Packing Tape
Reel Size N/A
Tape Width N/A
Qty 5000pcs
Absolute Maximum Ratings
Parameter
Symbol
Drain-source voltage
Continuous drain current
TC = 25°C (Silicon limit) TC = 25°C (Package limit)
TC = 100°C (Silicon limit)
Pulsed drain current (TC = 25°C, tp limited by Tjmax) Avalanche energy, single pulse (ID = 47A, Rg=25Ω)[1]
ID pulse EAS
Gate-Source voltage
Power dissipation (TC = 25°C)
Ptot
Operating junction and storage temperature
Tj , T stg
Soldering temperature, wave soldering only allowed at leads (1.6mm from case for...
