• Part: CRSM120N06L2Q
  • Description: SkyMOS2 N-MOSFET
  • Category: MOSFET
  • Manufacturer: CR Micro
  • Size: 1.31 MB
Download CRSM120N06L2Q Datasheet PDF
CR Micro
CRSM120N06L2Q
CRSM120N06L2Q is SkyMOS2 N-MOSFET manufactured by CR Micro.
Features - Uses CRM(CQ) advanced Sky MOS2 technology - Extremely low on-resistance RDS(on) - Excellent Qgx RDS(on) product(FOM) - AEC-Q101 Qualified Applications - DCDC Converter - Switching applications - UPS (Uninterrupible Power Supplies) Sky MOS2 N-MOSFET 60V, 10mΩ, 40A Product Summary VDS RDS(on).typ ID 60V 10mΩ 40A 100% DVDS Tested 100% Avalanche Tested Package Marking and Ordering Information Part # CRSM120N06L2Q Marking 120N06L2Q Package PDFN5- 6 Packing Reel Size Tape Width Tape&reel N/A N/A Absolute Maximum Ratings Parameter Drain-source voltage Continuous drain current TC = 25°C (Silicon limit) TC = 25°C (Package limit) TC = 100°C (Silicon limit) Pulsed drain current (TC = 25°C, tp limited by Tjmax) Avalanche energy, single pulse (IAS = 20A, Rg=25Ω)[1] Gate-Source voltage Power dissipation (TC = 25°C) Operating junction and storage temperature Soldering temperature, wave soldering only allowed at leads (1.6mm from case for 10s) ※. Notes: EAS is tested at starting Tj = 25℃, L = 0.3m H, IAS =20A, VGS = 10V. Symbol VDS ID pulse EAS VGS Ptot Tj , T stg Tsold Value 60 40 40 28 160 60 ±20 37 -55...+175 Qty 4000pcs Unit V A m J V W °C °C Rev1.0 ©China Resources Microelectronics (Chongqing) Limited Page...