CRSQ027N10NZ - SkyMOS1 N-MOSFET

CR Micro

Key Features

Uses CRM(CQ) advanced SkyMOS1 technology.
Extremely low on-resistance RDS(on).
Excellent QgxRDS(on) product(FOM).
Qualified according to JEDEC criteria.
175°C Operating Temperature.

CRSQ027N10NZ skymos1 n-mosfet by CR Micro - Datasheet Preview

Datasheet Details

Part number	CRSQ027N10NZ
Manufacturer	CR Micro
File Size	1.26 MB
Description	SkyMOS1 N-MOSFET
Datasheet	CRSQ027N10NZ Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
CRSQ027N10N	N-MOSFET	CRM
CRSQ036N10N	N-MOSFET	CRM
CRSQ113N20N	N-MOSFET	CRM
CRS01	Schottky Barrier Rectifier	Toshiba Semiconductor
CRS02	Schottky Barrier Type Schottky Barrier Rectifier	Toshiba Semiconductor

Other Datasheets by CR Micro

Part Number	Description
CRSQ030N08N	SkyMOS1 N-MOSFET
CRSQ073N15NZ	SkyMOS1 N-MOSFET
CRSQ113N20NZ	SkyMOS3 N-MOSFET
CRSQ113N20NZ-Q	SkyMOS3 N-MOSFET
CRSQ155N20N3	SkyMOS3 N-MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

() CRSQ027N10NZ SkyMOS1 N-MOSFET 100V, 2.4mΩ, 240A Features • Uses CRM(CQ) advanced SkyMOS1 technology • Extremely low on-resistance RDS(on) • Excellent QgxRDS(on) product(FOM) • Qualified according to JEDEC criteria • 175°C Operating Temperature Applications • Motor control and drive • Battery management • UPS (Uninterrupible Power Supplies) Product Summary VDS 100V RDS(on) 2.