CR Micro CRSS045N07N
SkyMOS1 N-MOSFET
| Part No. | CRSS045N07N |
|---|---|
| Datasheet | CRSS045N07N Download |
| Manufacturer |  CR Micro |
| Description | SkyMOS1 N-MOSFET |
| Buy | Stock & Price |
FEATURES
● Uses CRM(CQ) advanced SkyMOS1 technology● Extremely low on-resistance RDS(on)
● Excellent QgxRDS(on) product(FOM)
● Qualified according to JEDEC criteria
APPLICATIONS
● Motor control and drive● Battery management
● UPS (Uninterrupible Power Supplies) Product Summary VDS 70V RDS(on) 3.8mΩ ID 120A 100% Avalanche Tested 100% DVDS Tested CRST048N07N CRSS045N07N Package Marking and Ordering Information Part # CRST048N07N CRSS045N07N Marking - Package TO-220 TO-263 Packing Tube Tube Reel Size N/A N/A Tape Width N/A N/A Qty 50pcs 50pcs
ABSOLUTE MAXIMUM RATINGS
Parameter Symbol Drain-source voltage VDS Continuous drain current TC = 25°C (Silicon limit) TC = 25°C (Package limit) TC = 100°C (Silicon limit) Pulsed drain current (TC = 25°C, tp limited by Tjmax) ID ID pulse Avalanche energy, single pulse (L=0.5mH, Rg=25Ω) EAS Gate-Source voltage VGS Power dissipation (TC = 25°C) Ptot Operating junction and storage temperature Tj , T stg ※. Notes:1.EAS is tested at starting Tj = 25℃, L = 0.5mH, IAS = 26.0A, VGS = 10V.
