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CRST037N10N - SkyMOS1 N-MOSFET

Datasheet Summary

Features

  • Uses CRM(CQ) advanced SkyMOS1 technology.
  • Extremely low on-resistance RDS(on).
  • Excellent QgxRDS(on) product(FOM).
  • Qualified according to JEDEC criteria.

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Datasheet preview – CRST037N10N

Datasheet Details

Part number CRST037N10N
Manufacturer CR Micro
File Size 969.11 KB
Description SkyMOS1 N-MOSFET
Datasheet download datasheet CRST037N10N Datasheet
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Full PDF Text Transcription

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() CRST037N10N,CRSS035N10N SkyMOS1 N-MOSFET 100V, 3mΩ, 120A Features • Uses CRM(CQ) advanced SkyMOS1 technology • Extremely low on-resistance RDS(on) • Excellent QgxRDS(on) product(FOM) • Qualified according to JEDEC criteria Applications • Motor control and drive • Battery management • UPS (Uninterrupible Power Supplies) Product Summary VDS 100V RDS(on) typ 3mΩ ID 120A 100% DVDS Tested 100% Avalanche Tested CRST037N10N CRSS035N10N Package Marking and Ordering Information Part # CRST037N10N CRSS035N10N Marking CRST037N10N CRSS035N10N Package TO-220 TO-263 Packing Tube Tape Reel Size N/A N/A Tape Width N/A N/A Qty 50pcs 1000pcs Absolute Maximum Ratings Parameter Drain-source voltage Continuous drain current TC = 25°C (Silicon limit) TC = 25°C (Package limit) TC = 100°C (
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