CRST065N09N Datasheet | CR Micro

Features - Uses CRM(CQ) advanced Sky MOS1 technology - Extremely low on-resistance RDS(on) - Excellent Qgx RDS(on) product(FOM) - Qualified according to JEDEC criteria Applications - Motor control and drive - Battery management System - UPS (Uninterrupible Power Supplies) Product Summary VDS RDS(on).typ ID 90V 5.6mΩ 120A 100% DVDS Tested 100% Avalanche Tested Package Marking and Ordering Information Part # Marking CRST065N09N CRST065N09N Package TO-220 Packing Tube Reel Size N/A Tape Width N/A Qty 50pcs Absolute Maximum Ratings Parameter Symbol Drain-source voltage Continuous drain current TC = 25°C (Silicon limit) TC = 25°C (Package limit) TC = 100°C (Silicon limit) Pulsed drain current (TC = 25°C, tp limited by Tjmax) Avalanche energy, single pulse (ID = 41A, Rg=25Ω)[1] ID pulse EAS Gate-Source voltage Power dissipation (TC = 25°C) Ptot Operating junction and storage temperature Tj , T stg ※. Notes: 1.EAS is tested at starting Tj = 25℃, L = 0.5m H, IAS =41A, VGS =...