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CRSY045N06L2Q - SkyMOS2 N-MOSFET

Features

  • Uses CRM(CQ) advanced SkyMOS2 technology.
  • Extremely low on-resistance RDS(on).
  • Excellent QgxRDS(on) product(FOM).
  • AEC-Q101 Qualified.

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Datasheet preview – CRSY045N06L2Q

Datasheet Details

Part number CRSY045N06L2Q
Manufacturer CR Micro
File Size 1.53 MB
Description SkyMOS2 N-MOSFET
Datasheet download datasheet CRSY045N06L2Q Datasheet
Additional preview pages of the CRSY045N06L2Q datasheet.

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Full PDF Text Transcription

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() Features • Uses CRM(CQ) advanced SkyMOS2 technology • Extremely low on-resistance RDS(on) • Excellent QgxRDS(on) product(FOM) • AEC-Q101 Qualified Applications • Motor control and drive • Battery management • UPS (Uninterrupible Power Supplies) CRSY045N06L2Q SkyMOS2 N-MOSFET 60V, 4.5mΩ, 90A Product Summary VDS 60V RDS(on)@10V typ 4.5mΩ ID 90A 100% DVDS Tested 100% Avalanche Tested CRSY045N06L2Q Package Marking and Ordering Information Part # CRSY045N06L2Q Marking 045N06L2Q Package Packing LFPAK5*6 Tape&reel Reel Size N/A Absolute Maximum Ratings Parameter Symbol Drain-source voltage VDS Continuous drain current TC = 25°C (Silicon limit) ID TC = 100°C (Silicon limit) Pulsed drain current (TC = 25°C, tp limited by Tjmax) Avalanche energy, single pulse (L=0.
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