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CRSZ025N10NZ - SkyMOS1 N-MOSFET

Key Features

  • Uses CRM(CQ) advanced SkyMOS1 technology.
  • Extremely low on-resistance RDS(on).
  • Excellent QgxRDS(on) product(FOM).
  • Qualified according to JEDEC criteria.

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Datasheet Details

Part number CRSZ025N10NZ
Manufacturer CR Micro
File Size 1.32 MB
Description SkyMOS1 N-MOSFET
Datasheet download datasheet CRSZ025N10NZ Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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() CRSZ025N10NZ SkyMOS1 N-MOSFET 100V, 2mΩ, 240A Features • Uses CRM(CQ) advanced SkyMOS1 technology • Extremely low on-resistance RDS(on) • Excellent QgxRDS(on) product(FOM) • Qualified according to JEDEC criteria Applications • Motor control and drive • Battery management • UPS (Uninterrupible Power Supplies) Product Summary VDS 100V RDS(on) 2mΩ ID 240A 100% DVDS Tested 100% Avalanche Tested CRSZ025N10NZ Package Marking and Ordering Information Part # Marking Package Packing Reel Size Tape Width Qty CRSZ025N10NZ CRSZ025N10NZ TOLL Tape N/A N/A - Absolute Maximum Ratings Parameter Drain-source voltage Continuous drain current TC = 25°C (Silicon limit) TC = 25°C (Package limit) TC = 100°C (Silicon limit) Pulsed drain current (TC = 25°C, tp limited by Tjmax) Avalanche e