CRTD550P06N2-G Key Features
- Uses CRM advanced Trench technology
- Extremely low on-resistance RDS(on)
- Excellent QgxRDS(on) product(FOM)
- Qualified according to JEDEC criteria
CRTD550P06N2-G is Trench P-MOSFET manufactured by CR Micro.
| Part Number | Description |
|---|---|
| CRTD019N03L2-G | Silicon N-Channel Power MOSFET |
| CRTD028N03L2-G | Silicon N-Channel Power MOSFET |
| CRTD028N04L2-G | Silicon N-Channel Power MOSFET |
| CRTD030N03L | 30V Trench N-MOSFET |
| CRTD030N04L | 40V Trench N-MOSFET |
Features Uses CRM advanced Trench technology Extremely low on-resistance RDS(on) Excellent QgxRDS(on) product(FOM) Qualified according to JEDEC criteria Applications Motor control and drive Electrical tools Lithium battery protection CRTD550P06N2-G Trench P-MOSFET -60V, 42mΩ, -24A Product Summary VDS -60V RDS(on) typ. A ©WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 1 CRTD550P06N2-G Trench P-MOSFET...