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CRTD550P06N2-G - Trench P-MOSFET

Datasheet Summary

Features

  • Uses CRM advanced Trench technology.
  • Extremely low on-resistance RDS(on).
  • Excellent QgxRDS(on) product(FOM).
  • Qualified according to JEDEC criteria.

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Datasheet preview – CRTD550P06N2-G

Datasheet Details

Part number CRTD550P06N2-G
Manufacturer CR Micro
File Size 1.03 MB
Description Trench P-MOSFET
Datasheet download datasheet CRTD550P06N2-G Datasheet
Additional preview pages of the CRTD550P06N2-G datasheet.

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Full PDF Text Transcription

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Features • Uses CRM advanced Trench technology • Extremely low on-resistance RDS(on) • Excellent QgxRDS(on) product(FOM) • Qualified according to JEDEC criteria Applications • Motor control and drive • Electrical tools • Lithium battery protection CRTD550P06N2-G Trench P-MOSFET -60V, 42mΩ, -24A Product Summary VDS -60V RDS(on) typ. ID 42mΩ -24A 100% DVDS Tested 100% Avalanche Tested Package Marking and Ordering Information Part # CRTD550P06N2-G Marking T550P06N2 Package TO-252 Packing Reel Absolute Maximum Ratings Parameter Drain-source voltage Continuous drain current TC = 25°C TC = 100°C Pulsed drain current (TC = 25°C, tp limited by Tjmax) Avalanche energy, single pulse (L=0.
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