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CRTM052N02S2-G - Trench N-MOSFET

Features

  • Uses CRM advanced Trench technology.
  • Extremely low on-resistance RDS(on).
  • Excellent QgxRDS(on) product(FOM).
  • Qualified according to JEDEC criteria.

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Datasheet preview – CRTM052N02S2-G

Datasheet Details

Part number CRTM052N02S2-G
Manufacturer CR Micro
File Size 1.06 MB
Description Trench N-MOSFET
Datasheet download datasheet CRTM052N02S2-G Datasheet
Additional preview pages of the CRTM052N02S2-G datasheet.

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Full PDF Text Transcription

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Features • Uses CRM advanced Trench technology • Extremely low on-resistance RDS(on) • Excellent QgxRDS(on) product(FOM) • Qualified according to JEDEC criteria Applications • Motor control and drive • Electrical tools • Lithium battery protection CRTM052N02S2-G Trench N-MOSFET 20V, 3.1mΩ, 80A Product Summary VDS 20V RDS(on) typ. ID 3.1mΩ 80A 100% DVDS Tested 100% Avalanche Tested Package Marking and Ordering Information Part # CRTM052N02S2-G Marking T052N02S2 Package PDFN5×6 Packing Reel Absolute Maximum Ratings Parameter Drain-source voltage Continuous drain current TC = 25°C （Silicon limited） TC = 25°C （Package limited） TC = 100°C （Package limited） Pulsed drain current (TC = 25°C, tp limited by Tjmax) Avalanche energy, single pulse (L=0.
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