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CRTM055N03LE - Trench N-MOSFET

Features

  • Uses CRM(CQ) advanced Trench MOS technology.
  • Extremely low on-resistance RDS(on).
  • Excellent QgxRDS(on) product(FOM).
  • Qualified according to JEDEC criteria.

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Datasheet preview – CRTM055N03LE

Datasheet Details

Part number CRTM055N03LE
Manufacturer CR Micro
File Size 582.82 KB
Description Trench N-MOSFET
Datasheet download datasheet CRTM055N03LE Datasheet
Additional preview pages of the CRTM055N03LE datasheet.

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Full PDF Text Transcription

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() Features • Uses CRM(CQ) advanced Trench MOS technology • Extremely low on-resistance RDS(on) • Excellent QgxRDS(on) product(FOM) • Qualified according to JEDEC criteria Applications • Motor control and drive • Battery management • UPS (Uninterrupible Power Supplies) CRTM055N03LE Trench N-MOSFET 30V, 4mΩ, 54A Product Summary VDS 30V RDS(on) typ. 4mΩ ID 54A 100% DVDS Tested 100% Avalanche Tested ESD Protected Package Marking and Ordering Information Part # CRTM055N03LE Marking TM055N03LE Package DFN5X6 Packing Reel Absolute Maximum Ratings Parameter Drain-source voltage Continuous drain current TC = 25°C (Silicon limit) TC = 25°C (Package limit) TC = 100°C (Silicon limit) Pulsed drain current (TC = 25°C, tp limited by Tjmax) Avalanche energy, single pulse (L=0.
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